 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| MGP15N40CL, MGB15N40CL, MGC15N40CL Internally Clamped N-Channel IGBT This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. http://onsemi.com * Gate-Emitter ESD Protection * Temperature Compensated Gate-Collector Voltage Clamp Limits * * * * * Stress Applied to Load Integrated ESD Diode Protection Low Threshold Voltage to Interface Power Loads to Logic or Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Optional Gate Resistor (RG) N-CHANNEL IGBT 15 A, 410 V VCE(on) = 1.8 V MAX C G RG RGE E MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Gate Voltage Gate-Emitter Voltage Collector Current-Continuous @ TC = 25C Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Temperature Range Symbol VCES VCER VGE IC PD Value 440 440 22 15 136 1.0 TJ, Tstg -55 to 175 Unit VDC VDC VDC ADC Watts W/C C D2PAK CASE 418B STYLE 3 G C TO-220 CASE 221A STYLE 9 MARKING DIAGRAMS GP15N40CL ALYYWW E GB15N40CL ALYYWW A = Assembly Location WL, L = Wafer Lot YY, Y = Year WW, W = Work Week ORDERING INFORMATION Device MGP15N40CL MGB15N40CLT4 MGC15N40CL Package TO-220 D2PAK Die Options Shipping 50 Units/Rail 800 Tape & Reel Not Applicable (c) Semiconductor Components Industries, LLC, 2000 1 April, 2000 - Rev. 1 Publication Order Number: MGP15N40CL/D MGP15N40CL, MGB15N40CL, MGC15N40CL UNCLAMPED DRAIN-TO-SOURCE AVALANCHE CHARACTERISTICS (TJ Characteristic Single Pulse Collector-to-Emitter Avalanche Energy VCC = 50 V, VGE = 5 V, Pk IL = 14.2 A, L = 3 mH, Starting TJ = 25C VCC = 50 V, VGE = 5 V, Pk IL = 10 A, L = 3 mH, Starting TJ = 150C t150C) Symbol EAS 300 150 Value Unit mJ THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient TO-220 D2PAK Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 5 seconds Symbol RJC RJA RJA TL Value 1.0 62.5 50 275 C Unit C/W ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Clamp Voltage Zero Gate Voltage Collector Current BVCES ICES IC = 2 mA TJ = -40C to 175C VCE = 350 V, VGE = 0, TJ = 25C VCE = 350 V, VGE = 0, TJ = 150C Reverse Collector-Emitter Leakage Current Gate-Emitter Clamp Voltage Gate-Emitter Leakage Current Gate Resistor (Optional) Gate Emitter Resistor IECS BVGES IGES RG RGE VCE = -24 V IG = 5 mA VGE = 10 V - - 380 - - - 17 384 - 10 410 1.0 10 0.35 20 550 70 18 440 40 200 1.0 22 1000 - 26 mA VDC ADC k VDC ADC ON CHARACTERISTICS* Gate Threshold Voltage Threshold Temperature Coefficient (Negative) Collector-to-Emitter On-Voltage Collector-to-Emitter On-Voltage VGE(th) - VCE(on) VCE(on) IC = 1 mA VGE = VCE - IC = 6 A, VGE = 4 V IC = 10 A, VGE = 4.5 V, TJ = 150C VCE = 5 V, IC = 6 A 1.0 - - - 1.6 4.4 1.25 1.45 2.1 - 1.8 1.8 VDC mV/C VDC VDC Forward Transconductance gfs 8.0 15 - Mhos DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance *Pulse Test: Pulse Width CISS COSS VCC = 15 V VGE = 0 V f = 1 MHz - - - 700 130 3.5 - - - pF v 300 S, Duty Cycle v 2%. CRSS http://onsemi.com 2 MGP15N40CL, MGB15N40CL, MGC15N40CL ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Test Conditions Min Typ Max Unit SWITCHING CHARACTERISTICS* Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Gate Charge td(off) tf td(on) tr QT Q1 *Pulse Test: Pulse Width VCC = 300 V, IC = 10 A RG = 1 k, L = 300 H VCC = 10 V, IC = 6.5 A RG = 1 k, RL = 1 VCC = 350 V IC = 15 A VGE = 5 V - - - - - - - 13 6.0 1.0 5.0 TBD TBD TBD - - - - - - - nC Sec Sec v 300 S, Duty Cycle v 2%. Q2 http://onsemi.com 3 MGP15N40CL, MGB15N40CL, MGC15N40CL I C , COLLECTOR CURRENT (AMPS) I C , COLLECTOR CURRENT (AMPS) 45 40 35 30 25 20 15 10 5 0 0 1 2 3 4 5 Tj = 25C 6 7 8 VGE = 3.0 V VGE = 10.0 V VGE = 5.0 V VGE = 4.0 V 45 40 35 30 25 20 15 10 5 0 0 1 2 3 4 5 Tj = 150C 6 7 8 VGE = 3.0 V VGE = 10.0 V VGE = 5.0 V VGE = 4.0 V VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS) Figure 1. Output Characteristics V CE , COLLECTOR TO EMITTER VOLTAGE (VOLTS) Figure 2. Output Characteristics I C , COLLECTOR CURRENT (AMPS) 30 VCE = 10 V 25 20 15 Tj = 150C Tj = 25C 5 0 Tj = 40C 10 2.0 1.8 IC = 15 A IC = 10 A IC = 5 A 1.5 1.3 1.0 0.8 VGE = 15 V 0.5 0.3 0.0 -50 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -25 0 25 50 75 100 125 150 VGE, GATE TO EMITTER VOLTAGE (VOLTS) Tj, JUNCTION TEMPERATURE (C) Figure 3. Transfer Characteristics Figure 4. Collector-to-Emitter Saturation Voltage versus Junction Temperature 10000 THRESHOLD VOLTAGE (VOLTS) 2.5 Mean + 4 Mean 1.5 Mean - 4 IC = 1 mA C, CAPACITANCE (pF) 1000 CISS 2.0 100 COSS 1.0 10 CRSS 1 0 20 40 60 80 100 120 140 160 180 200 VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS) 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TEMPERATURE (C) Figure 5. Capacitance Variation Figure 6. Threshold Voltage versus Temperature http://onsemi.com 4 MGP15N40CL, MGB15N40CL, MGC15N40CL 20 18 SWITCHING TIME (mS) 16 14 12 10 8 6 4 2 0 250 500 750 1000 tf VCC = 300 V VGE = 5.0 V Tj = 25C IC = 10 A L = 300 H 20 18 SWITCHING SPEED (mS) 16 14 12 10 8 6 4 2 0 250 500 750 VCC = 300 V VGE = 5.0 V Tj = 150C IC = 10 A L = 300 H 1000 tf td(off) td(off) RG, GATE RESISTANCE (OHMS) RG, GATE RESISTANCE (OHMS) Figure 7. Switching Speed versus Gate Resistance 20 18 SWITCHING TIME (mS) 16 14 12 10 8 6 4 2 0 -50 -25 0 25 50 75 100 125 150 tf VCC = 300 V VGE = 5.0 V RG = 1000 IC = 10 A L = 300 H Figure 8. Switching Speed versus Gate Resistance 20 18 SWITCHING TIME (mS) td(off) td(off) 16 14 12 10 8 6 4 2 0 0 VCC = 300 V VGE = 5.0 V RG = 1000 Tj = 150C L = 300 H 2 4 6 tf 8 10 12 14 16 TC, CASE TEMPERATURE (C) IC, COLLECTOR CURRENT (AMPS) Figure 9. Switching Speed versus Case Temperature Figure 10. Total Switching Losses versus Collector Current 30 I L, LATCH CURRENT (AMPS) 25 25C 150C 20 15 VCC = 50 V VGE = 5.0 V RG = 1000 20 I L, LATCH CURRENT (AMPS) 18 3.0 mH 16 14 6.0 mH 12 10 8 6 4 2 0 10 5 0 0 1 2 3 4 5 6 7 8 9 10 INDUCTOR (mH) VCC = 50 V VGE = 5.0 V RG = 1000 0 25 50 75 100 125 150 175 TEMPERATURE (C) Figure 11. Latch Current versus Inductor (Typical) Figure 12. Latch Current versus Temperature (Typical) http://onsemi.com 5 MGP15N40CL, MGB15N40CL, MGC15N40CL PACKAGE DIMENSIONS TO-220 CASE 221A-09 ISSUE AA -T- B 4 SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 F T S C Q 123 A U K H Z L V G D N R J STYLE 9: PIN 1. 2. 3. 4. GATE COLLECTOR EMITTER COLLECTOR D2PAK CASE 418B-03 ISSUE D C E -B- 4 DIM A B C D E G H J K S V V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.575 0.625 0.045 0.055 MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 14.60 15.88 1.14 1.40 A 1 2 3 S -T- SEATING PLANE K G D H 3 PL M J 0.13 (0.005) TB M STYLE 3: PIN 1. 2. 3. 4. ANODE CATHODE ANODE CATHODE http://onsemi.com 6 MGP15N40CL, MGB15N40CL, MGC15N40CL Notes http://onsemi.com 7 MGP15N40CL, MGB15N40CL, MGC15N40CL TMOS is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com Fax Response Line: 303-675-2167 or 800-344-3810 Toll Free USA/Canada N. American Technical Support: 800-282-9855 Toll Free USA/Canada EUROPE: LDC for ON Semiconductor - European Support German Phone: (+1) 303-308-7140 (M-F 1:00pm to 5:00pm Munich Time) Email: ONlit-german@hibbertco.com French Phone: (+1) 303-308-7141 (M-F 1:00pm to 5:00pm Toulouse Time) Email: ONlit-french@hibbertco.com English Phone: (+1) 303-308-7142 (M-F 12:00pm to 5:00pm UK Time) Email: ONlit@hibbertco.com EUROPEAN TOLL-FREE ACCESS*: 00-800-4422-3781 *Available from Germany, France, Italy, England, Ireland CENTRAL/SOUTH AMERICA: Spanish Phone: 303-308-7143 (Mon-Fri 8:00am to 5:00pm MST) Email: ONlit-spanish@hibbertco.com ASIA/PACIFIC: LDC for ON Semiconductor - Asia Support Phone: 303-675-2121 (Tue-Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong & Singapore: 001-800-4422-3781 Email: ONlit-asia@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-8549 Phone: 81-3-5740-2745 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 8 MGP15N40CL/D |
Price & Availability of MGB15N40CLT4
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |